Method of making silicon on sapphire field effect transistors wi

Details Method of making silicon on sapphire field effect transistors wi Method of making silicon on sapphire field effect transistors wi

1977-12-15

1978-12-26

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 156612, 156613, 156646, 156647, 156655, 156661, 156667, 357 4, 357 23, 357 44, 357 49, 357 60, H01L 2186, H01L 2712

Patent

active

041314964

ABSTRACT:
The method comprises forming a blind hole in a sapphire substrate using a sulfur hexafluoride gas etchant and an etch mask comprising a single layer of silicon nitride. The blind holes are filled with epitaxially grown silicon and field effect transistors are laid out with their gates orthogonal to a line which is at a 45.degree. angle to a standard wafer flat, i.e. orthogonal to the projection of the "c" axis onto the "r" plane of the sapphire wafer.

REFERENCES:
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patent: 3476991 (1969-11-01), Mize et al.
patent: 3493430 (1970-02-01), Manasevit
patent: 3546036 (1970-12-01), Manasevit
patent: 3652324 (1972-03-01), Chu et al.
patent: 3679502 (1972-07-01), Hays
patent: 3743552 (1973-07-01), Fa
patent: 3969753 (1976-07-01), Thorsen et al.
patent: 4052251 (1977-10-01), Weitzel
Maurits, J.E.A., "Problems . . . . Preparation of SOS Wafers" Solid State Tech., Apr. 1977, pp. 81-86.
Stinson et al., "Sulfur Hexafluoride Etching Effects in Silicon" J. Electrochem. Soc., vol. 123, No. 4, Apr. 1976, pp. 551-555.
Manasevit, H.M., "Gas-Phase Etching of Sapphire IBID., vol. 121, No. 2, Feb. 1974, pp. 293-297.

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