Method of making silicides by heating in oxygen to remove contam

Fishing – trapping – and vermin destroying

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437 11, 437 24, 437178, 437239, 437 56, 437946, 437 41, 437 44, 148DIG17, 148DIG19, H01L 21283, H01L 21316

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048867659

ABSTRACT:
Silicides are important for submicron VLSIC technology. Problems have been found in forming silicides by known techniques involving simply depositing a metal film and heating that metal to form a silicide layer. This invention solves the problems through recognition that polymeric contamination can be left on the surface from commonly-used previous reactive ion etch steps, and removes any such contamination to metal deposition by the additional step of heating in dry oxygen at a low temperature, such as 800 degrees Centigrade, before the contamination has been significantly hardened.

REFERENCES:
patent: 3620850 (1971-11-01), Deap
patent: 3983264 (1976-09-01), Schroen et al.
patent: 4378628 (1983-04-01), Levinstein et al.
patent: 4484979 (1984-11-01), Stocker
patent: 4585517 (1986-04-01), Stemple
patent: 4622735 (1986-01-01), Shibata
SZE, SM., VLSI Technology, 1983, McGraw Hill, pp. 140-143, 242-251.
English Translation of Japan Pat. No. 60-7441, (1985), "Surface Treatment of Semiconductor Layer," M. Tajima.

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