Fishing – trapping – and vermin destroying
Patent
1988-10-26
1989-12-12
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 11, 437 24, 437178, 437239, 437 56, 437946, 437 41, 437 44, 148DIG17, 148DIG19, H01L 21283, H01L 21316
Patent
active
048867659
ABSTRACT:
Silicides are important for submicron VLSIC technology. Problems have been found in forming silicides by known techniques involving simply depositing a metal film and heating that metal to form a silicide layer. This invention solves the problems through recognition that polymeric contamination can be left on the surface from commonly-used previous reactive ion etch steps, and removes any such contamination to metal deposition by the additional step of heating in dry oxygen at a low temperature, such as 800 degrees Centigrade, before the contamination has been significantly hardened.
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SZE, SM., VLSI Technology, 1983, McGraw Hill, pp. 140-143, 242-251.
English Translation of Japan Pat. No. 60-7441, (1985), "Surface Treatment of Semiconductor Layer," M. Tajima.
Chen Min-Liang
Leung Chung W.
Lu Chih-Yuan
Tsai Nun-Sian
American Telephone and Telegraph Company AT&T Bell Laboratories
Fox J. H.
Hearn Brian E.
Quach T. N.
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