Method of making semiconductor devices using epitaxial technique

Details Method of making semiconductor devices using epitaxial technique Method of making semiconductor devices using epitaxial technique

1993-07-01

1994-03-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437110, 437976, H01L 21205

Patent

active

052984575

ABSTRACT:
The all epitaxial process starts with a high resistivity silicon substrate. Alternating layers of silicon and silicon-germanium are epitaxially grown on the substrate under conditions which create a region with misfit dislocations. A low resistivity silicon layer is then grown over the region. The material is inverted such that the high resistivity layer can be used to form the base of the device. The thickness of the high resistivity layer is adjusted to equal the width of the base of the semiconductor device to be fabricated.

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patent: 4959694 (1990-09-01), Gell
patent: 4962051 (1990-10-01), Liaw
patent: 5102810 (1992-04-01), Salih
patent: 5180684 (1993-01-01), Fujioka

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