Method of making semiconductor devices having ohmic contact

Details Method of making semiconductor devices having ohmic contact Method of making semiconductor devices having ohmic contact

1988-09-30

1991-05-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 51, 437 60, 437193, 437200, 148DIG19, 148DIG147, H01L 2188

Patent

active

050136860

ABSTRACT:
A method being capable of achieving the reduction in contact resistance between each layer when bringing a silicide layer into contact with a polycrystalline-silicon (polysilicon) layer in the manufacture of semiconductor devices. The method comprises the steps of forming a polysilicon layer and a silicide layer thereon over a partial top surface of a semiconductor substrate, forming an insulating layer over said silicide layer and the entire top surface of the substrate, forming a contact window by etching the partial area of the insulating layer over said silicide layer, and forming a polysilicon layer over the entire top surface of the substrate after performing ion-implantation through said contact window, wherein said ion-implantation is performed with N-type high doping into the silicide.

REFERENCES:
patent: 4128670 (1978-12-01), Gaensslen
patent: 4388121 (1983-06-01), Rao
patent: 4398335 (1983-08-01), Lehrer
patent: 4450620 (1984-05-01), Fuls et al.
patent: 4519126 (1985-05-01), Hsu
patent: 4555842 (1985-12-01), Levinstein et al.
patent: 4581623 (1986-04-01), Wang
patent: 4597153 (1986-07-01), Tsang
patent: 4640844 (1987-02-01), Neppl et al.
patent: 4703552 (1987-11-01), Baldi et al.
patent: 4740479 (1988-04-01), Neppl et al.
patent: 4782033 (1988-11-01), Gierisch et al.

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