Method of making semiconductor device with air-bridge interconne

Details Method of making semiconductor device with air-bridge interconne Method of making semiconductor device with air-bridge interconne

1992-09-02

1994-05-03

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437184, 437927, 148DIG105, B44C 122

Patent

active

053084403

ABSTRACT:
A semiconductor device with air-bridge interconnection comprises: a substrate; a plurality of mesas with distance therebetween smaller than a predetermined value; and a metal layer supported by the plurality of mesas, the metal layer having a narrow portion at the intermediate portion thereof and both ends having larger width than the narrow portion. The air-bridge interconnection is obtained by side-etching controlled during dry-etching using interconnection metal layer as an etching-mask to remove a mass of semiconductor material under the interconnection metal layer. A method of producing the semiconductor device comprises the steps of forming a semiconductor material; forming a metal layer on a portion of the semiconductor material having a narrow portion in the intermediate portion thereof; and forming the air-bridge interconnection by dry-etching with side-etching controlled to form a groove having a predetermined depth; then forming a resistive layer on the bottom of the layer; and then dry-etching the semiconductor material and the metal layers again to remove a mass of the semiconductor material under the metal layer.

REFERENCES:
patent: 4637129 (1987-06-01), Derkits et al.
patent: 4683159 (1987-07-01), Bohrer et al.
patent: 4871687 (1989-10-01), Donzelli
patent: 4962058 (1990-10-01), Cronin et al.
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5162258 (1992-11-01), Lemnios et al.
"Air Bridges"; Howes, Gallium Arsenide; 1985, p. 485.

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