Method of making semiconductor device that has improved...

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S033000, C438S113000

Reexamination Certificate

active

06951800

ABSTRACT:
A method of making a semiconductor device includes a back-grinding step of grinding a back surface of a semiconductor substrate, a dicing step of dicing the semiconductor substrate along predetermined dicing lines so as to make pieces of semiconductor devices after the back-grinding step, and a laser exposure step of shining laser light on the back surface of the semiconductor substrate after the back-grinding step so as to remove grinding marks generated by the back-grinding step.

REFERENCES:
patent: 4390392 (1983-06-01), Robinson et al.
patent: 5693182 (1997-12-01), Mathuni
patent: 6046504 (2000-04-01), Kimura
patent: 6261919 (2001-07-01), Omizo
patent: 6337257 (2002-01-01), Toyosawa
patent: 6451671 (2002-09-01), Yamada
patent: 2001/0055856 (2001-12-01), Tao
patent: 1 091 394 (2001-04-01), None
patent: 1 098 365 (2001-05-01), None
patent: 62-275788 (1987-11-01), None
patent: 1-138723 (1989-05-01), None
patent: 4-42972 (1992-02-01), None
patent: 5-208406 (1993-08-01), None
patent: 5-72359 (1993-10-01), None
patent: 07-78793 (1995-03-01), None
patent: 7-78793 (1995-03-01), None
patent: 8-115893 (1996-05-01), None
patent: 09-38852 (1997-02-01), None
patent: 11-67700 (1999-03-01), None
patent: 2000-124176 (2000-04-01), None
patent: 2000-299354 (2000-10-01), None
patent: 2001-176830 (2001-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of making semiconductor device that has improved... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making semiconductor device that has improved..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making semiconductor device that has improved... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3466499

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.