Method of making semiconductor device having sacrificial salicid

Details Method of making semiconductor device having sacrificial salicid Method of making semiconductor device having sacrificial salicid

1998-11-17

2000-11-14

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438655, 438683, 438786, H01L 213205

Patent

active

061469831

ABSTRACT:
The present invention is directed to a transistor having a stacked silicide metal and method of making same. In general, the method comprises forming a layer of nitrogen-bearing silicon dioxide above the gate conductor and the source and drain regions of a transistor. In one illustrative embodiment, the method further comprises forming a layer of titanium above at least the surface of the gate conductor and the source and drain regions. Thereafter, a layer of cobalt is formed above the layer of titanium. The transistor is then subjected to a heat treating process such that at least the layer of cobalt forms a metal silicide. Also disclosed herein is a partially formed transistor comprised of a gate conductor, a source region and a gate region. In one illustrative embodiment, the transistor is further comprised of a layer of nitrogen-bearing silicon dioxide formed above the gate conductor and the source and drain regions. The transistor further comprises a layer of titanium positioned adjacent the layer of nitrogen-bearing silicon dioxide and a layer of cobalt positioned adjacent the layer of titanium.

REFERENCES:
patent: 4784973 (1988-11-01), Stevens et al.
patent: 5399526 (1995-03-01), Sumi
patent: 5567562 (1996-10-01), Nishio

Affiliated with

Also associated with

Rating

Method of making semiconductor device having sacrificial salicid does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making semiconductor device having sacrificial salicid, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making semiconductor device having sacrificial salicid will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2064828