Method of making semiconductor device

Details Method of making semiconductor device Method of making semiconductor device

2007-10-12

2008-12-16

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S675000, C438S620000, C438S508000

Reexamination Certificate

active

07465662

ABSTRACT:
A semiconductor device is manufactured by a method including forming a first interlayer insulating film. A first etching stopper film is formed on the first interlayer insulating film. A conductive layer is formed on the first etching stopper film. A second etching stopper film is formed to cover the conductive layer, an upper surface of the conductive layer and both side surfaces of the conductive layer. A second interlayer insulating film is formed on the second etching stopper film. A hole is formed penetrating the second interlayer insulating film in a direction of thickness and reaching the conductive layer. An interconnect is formed in the hole. The step of forming a hole includes etching the second interlayer insulating film under a first etching condition, and etching the second etching stopper film under a second etching condition different from the first etching condition.

REFERENCES:
patent: 5976984 (1999-11-01), Chen et al.
patent: 2003/0148618 (2003-08-01), Parikh
patent: 2004/0065957 (2004-04-01), Maekawa et al.
patent: 05-299515 (1993-11-01), None
patent: 09-007970 (1997-01-01), None
patent: 2000-294631 (2000-10-01), None

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