Method of making semiconductor apparatus having wiring groove an

Details Method of making semiconductor apparatus having wiring groove an Method of making semiconductor apparatus having wiring groove an

1996-09-26

1999-11-02

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438638, H01L 2144

Patent

active

059769726

ABSTRACT:
A semiconductor apparatus and a process for fabricating the same according to the invention permit reduction in width of a wiring pattern of the semiconductor apparatus and in distance between wiring elements. A stopper film and an insulating film are provided on a substrate. The etching rate of RIE for the insulating film is greater than that for the stopper film. The stopper film and insulating film are formed on the insulating film. A pattern of the contact hole is formed in the stopper film. A wiring pattern is formed on the resist film. The insulating films are etched by RIE with the resist film and stopper film used as masks. Thus, a groove for formation of wiring and a contact hole for formation of a contact plug are simultaneously formed in a self-alignment manner.

REFERENCES:
patent: 4832789 (1989-05-01), Cochran et al.
patent: 5169802 (1992-12-01), Yeh
patent: 5578523 (1996-11-01), Fiordalice et al.
patent: 5598027 (1997-01-01), Matsuura
patent: 5604156 (1997-02-01), Chung et al.
patent: 5635423 (1997-06-01), Huang et al.
patent: 5656543 (1997-08-01), Chung
Wolf, "Silicon Processing for the VLSI Era, vol. 2", Lattice Press, pp. 124-128, 244-248, 1990.

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