Method of making rib-structure shadow mask for ion implantation

Details Method of making rib-structure shadow mask for ion implantation Method of making rib-structure shadow mask for ion implantation

1975-12-29

1977-05-03

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148187, 156645, 156661, 428134, 428137, 428156, H01L 750

Patent

active

040212769

ABSTRACT:
A shadow mask particularly useful in ion implantation processes is disclosed. The mask is fabricated by doping a surface region of a semiconductor wafer to render that region resistant to a particular etchant, machining cavities in the surface of the wafer opposite the doped surface to a depth that does not quite reach the doped region, forming pattern openings in the webs remaining across the ends of the cavities, and thinning the webs by exposure to the particular etchant until the undoped material in the webs is removed. Thus, the ultimate thickness of the webs is controlled substantially by the doping depth.

REFERENCES:
patent: 3713922 (1973-01-01), Lepselter

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