Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1997-10-21
2000-10-03
Hamilton, Cynthia
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430324, 430326, 430328, 430313, 430314, G03F 740
Patent
active
061270989
ABSTRACT:
A method of forming a resist pattern including the steps of: forming a resist film by coating resist on the surface of a member to be processed, the resist containing a composition A capable of increasing the volume by chemical reaction; exposing and developing the coated resist film to form a pattern having an opening; and chemically reacting fluid containing a composition B with the composition A by contacting the fluid with the composition A to change the size of the opening of the resist film, the composition B being capable of increasing the volume of the composition A by chemical reaction with the composition A. It is possible to form a fine resist pattern by a simple method.
REFERENCES:
patent: 4187331 (1980-02-01), Hsioh-Lien Ma
patent: 4343876 (1982-08-01), Heirt et al.
patent: 4425473 (1984-01-01), Mizutani et al.
patent: 4840876 (1989-06-01), Arai
patent: 5096802 (1992-03-01), Hu
patent: 5234793 (1993-08-01), Sebald et al.
George R. Misium et al, Silicon Diffusion Characteristics of Different Surface Imaging Resists, SPIE, vol. 1262 Advances in Resist Technology and Processing VII (1990) pp. 74-83.
8226 Microelectronics Engineering 11(1990) Apr., No. 3 1/4, Amsterdan, NL re: "Chemical Amplification of Resist Lines (Carl)". Sebald et al.
362 Japanese Journal of Applied Physics 32(1993) Jan. 15, No. 1A/B, Part 2, Tokyo, Japan; re: "Plasma Swelling of Photoresist". Kuo.
European Search Report dated Nov. 16, 1995; Ref. No. J11093 3432 21 citing above listed references.
Kanazawa Masao
Kudo Hiroshi
Nakagawa Kenji
Oikawa Akira
Yano Ei
Fujitsu Limited
Hamilton Cynthia
LandOfFree
Method of making resist patterns does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making resist patterns, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making resist patterns will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-193567