Method of making reliable metal leads in high speed LSI semicond

Details Method of making reliable metal leads in high speed LSI semicond Method of making reliable metal leads in high speed LSI semicond

1996-11-06

1998-09-22

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438623, 438624, 438926, H01L 2128

Patent

active

058113525

ABSTRACT:
A method for manufacturing semiconductor device having conductive metal leads 14 with improved reliability, and device for same, comprising conductive metal leads 14 on a substrate 12, a first insulating material 18 at least between the conductive metal leads 14, and dummy leads 16 proximate the conductive metal leads 14. Heat from the conductive metal leads 14 is transferable to the dummy leads 16, and the dummy leads 16 are capable of dissipating the heat. The first insulating material 18 has a dielectric constant of less than 3.5. An optional heatsink 22 may be formed in contact with the first dummy leads 16 to further dissipate the Joule's heat from the conductive metal leads 14. An advantage of the invention is to improve reliability of metal leads for circuits using low-dielectric constant materials.

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