Semiconductor device manufacturing: process – Germanium or silicon or ge-si on iii-v
Reexamination Certificate
2005-02-08
2005-02-08
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Germanium or silicon or ge-si on iii-v
Reexamination Certificate
active
06852652
ABSTRACT:
A method of forming a silicon-germanium layer on an insulator includes preparing a silicon substrate; depositing a layer of silicon-germanium on the silicon substrate to form a silicon/silicon-germanium portion; implanting hydrogen ions in the silicon-germanium layer; preparing an insulator substrate; bonding the silicon/silicon-germanium portion to the insulator substrate with the silicon-germanium layer in contact with the insulator substrate to form a bonded entity; curing the bonded entity; and thermally annealing the bonded entity to split the bonded entity into a silicon/silicon germanium portion and a silicon-germanium-on-insulator portion and to relax the silicon germanium layers.
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Droes Steve Roy
Lee Jong-Jan
Maa Jer-Shen
Tweet Douglas J.
Curtin Joseph P.
Nhu David
Rabdau Matthew D.
Ripma David C.
Sharp Laboratories of America Inc.
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