Method of making plurality of FETs having different threshold va

Details Method of making plurality of FETs having different threshold va Method of making plurality of FETs having different threshold va

1998-01-29

2000-04-18

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438194, 438276, H01L 21338

Patent

active

060514558

ABSTRACT:
Disclosed is a method of fabricating a semiconductor device in which a plurality of FETs (Field Effect Transistors) having different threshold values are formed on the same substrate. The method includes the steps of: implanting ions of an impurity having a first conducting type in active regions of the plurality of FETs, to simultaneously form channel layers in the active regions; and implanting ions of an impurity having a second conducting type at bottom portion of the channel layers, to simultaneously form buried layers at the bottom portions of the channel layers; wherein a carrier concentration distribution in the active region of a specific one of the plurality of FETs is changed depending on a desired threshold value of the specific FET. In the semiconductor device fabricated in accordance with the method, each of the FETs is allowed to exhibit a desired electric characteristic and a desired controllability of a threshold value.

REFERENCES:
patent: 4013483 (1977-03-01), Nuzillat et al.
patent: 4472871 (1984-09-01), Green et al.
patent: 4937075 (1990-06-01), Hollingsworth et al.
patent: 5100831 (1992-03-01), Kuwata
patent: 5143857 (1992-09-01), Finchem et al.
patent: 5192701 (1993-03-01), Iwasaki

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