Method of making planarized heterostructures using selective epi

Details Method of making planarized heterostructures using selective epi Method of making planarized heterostructures using selective epi

1988-07-27

1990-03-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG26, 148DIG72, 148DIG100, 156610, 437 99, 437132, 437944, H01L 2120

Patent

active

049101641

ABSTRACT:
A lift-off method for forming regions of a first semiconductor such as GaAs (104) in recesses in a substrate of a second semiconductor such as silicon (102) with the surface of the first semiconductor region (104) coplanar with the surface of the second semiconductor layer (102). Also, interconnected devices in both regions. Preferred embodiment methods include growth by molecular beam epitaxy of a layer of the first semiconductor on a masked and recessed substrate of the second semiconductor followed by photolithographic removal of the grown layer outside of a neighborhood of the recesses and lift-off (by mask etching) of the remainder of the grown layer outside of the recesses.

REFERENCES:
patent: 3322581 (1967-05-01), Hendrickson et al.
patent: 3401449 (1968-09-01), Shaw
patent: 3764409 (1969-09-01), Nomura et al.
patent: 4727047 (1988-02-01), Bozler et al.
Li et al., "Aspects of GaAs Selective Area Growth . . . ", J. Electrochem. Soc., vol. 130, No. 10, Oct. 1983, pp. 2072-2075.
Matyi et al., "Patterned Growth of Gallium Arsenide on Silicon", J. Vac. Sci. Technol, B6 (2), Mar./Apr. 1988, pp. 699-702.
Aizhen et al., "Selective Area MBE Technique for GaAs . . . ", J. Vac. Sci. Tech., B3 (2), Mar./Apr. 1985, pp. 746-749.
Hong et al., "Summary Abstract: Selective--Area Epitaxy of GaAs . . . ", J. Vac. Sci. Technol., B4 (2), Mar./Apr. 1986, pp. 629-630.

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