Method of making ohmic contact between a thin film polysilicon l

Details Method of making ohmic contact between a thin film polysilicon l Method of making ohmic contact between a thin film polysilicon l

1996-06-18

1999-07-27

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438621, 438647, 438657, H01L 21283

Patent

active

059306629

ABSTRACT:
A method of making ohmic contact between a thin film polysilicon layer of a first conductivity type and a subsequently provided conductive layer includes: a) providing a semiconductor substrate having an outer region; b) providing a first insulating layer outwardly of the outer region; c) etching a first contact opening of a first diameter through the first insulating layer to the substrate outer region; d) providing conductivity enhancing dopant impurity of the first conductivity type into the substrate outer region to render the outer region electrically conductive; e) providing a thin film polysilicon layer of the first conductivity type into the first contact opening and in ohmic electrical connection with the substrate outer region; f) providing a second insulating layer outwardly of the thin film polysilicon layer and the first insulating layer; g) etching a second contact opening of a second diameter into the second insulating layer, the second contact opening overlapping with the first contact opening, the etching providing the second contact opening inwardly to the thin film polysilicon layer; and h) providing an electrically conductive layer atop the second insulating layer and within the second contact opening to the first conductivity type doped substrate outer region. An integrated circuit, including SRAM circuity, is also disclosed.

REFERENCES:
patent: 4855248 (1989-08-01), Ariizumi et al.
patent: 4888306 (1989-12-01), Komatsu et al.
patent: 4966870 (1990-10-01), Barber et al.
patent: 4978630 (1990-12-01), Kim
patent: 5084416 (1992-01-01), Ozaki et al.
patent: 5110762 (1992-05-01), Nakahara et al.
patent: 5113234 (1992-05-01), Furuta et al.
patent: 5174858 (1992-12-01), Yamamoto et al.
patent: 5191397 (1993-03-01), Yoshida
patent: 5194929 (1993-03-01), Ohshima et al.
patent: 5204279 (1993-04-01), Chan et al.
patent: 5236867 (1993-08-01), Furuta et al.
patent: 5243219 (1993-09-01), Katayama
patent: 5275972 (1994-01-01), Ogawa et al.
patent: 5286663 (1994-02-01), Manning
patent: 5309023 (1994-05-01), Motonami et al.
patent: 5323046 (1994-06-01), Ema et al.
patent: 5348901 (1994-09-01), Chen et al.
patent: 5355009 (1994-10-01), Honda et al.
patent: 5376814 (1994-12-01), Lee
patent: 5404030 (1995-04-01), Kim et al.
patent: 5422499 (1995-06-01), Manning
patent: 5430328 (1995-07-01), Hsue

Affiliated with

Also associated with

Rating

Method of making ohmic contact between a thin film polysilicon l does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making ohmic contact between a thin film polysilicon l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making ohmic contact between a thin film polysilicon l will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-891807