Etching a substrate: processes – Etching of semiconductor material to produce an article...
Patent
1995-06-07
1996-11-26
Fourson, George
Etching a substrate: processes
Etching of semiconductor material to produce an article...
437228, 437921, H02P 616, H01G 516
Patent
active
055782248
ABSTRACT:
A polysilicon ground plane is formed over dielectric layers and under a suspended, movable mass in a surface micromachined device. The process includes steps of forming a diffused region in a substrate, forming the dielectric layers over the substrate, forming the ground plane over dielectric layers, and forming a body having a suspended mass, a first anchor extending from the mass down to the diffused region, and a second anchor extending from the mass down to the ground plane. The two anchors are formed simultaneously. The ground plane, which can be formed with only three additional steps over prior processes, serves as a ground plane to control changes and also as a local interconnect.
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Analog Devices Inc.
Fourson George
Kirkpatrick Scott
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