Method of making metal contacts and interconnections for VLSI de

Details Method of making metal contacts and interconnections for VLSI de Method of making metal contacts and interconnections for VLSI de

1985-05-10

1988-05-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437198, 437200, 437203, H01L 2128

Patent

active

047420146

ABSTRACT:
Metal contacts and interconnections for integrated circuits utilize copper as the primary conductor, with the copper being totally encased in refractory metal layers on both top and bottom surfaces and also sidewalls. The contact hole in silicon oxide may be filled with a plug of refractory metal before the copper is deposited, or the first refractory metal layer may be conformally deposited to coat the sidewalls of the hole.

REFERENCES:
patent: 4109297 (1978-08-01), Lesh et al.
patent: 4367119 (1983-07-01), Logan et al.
patent: 4541169 (1985-09-01), Bartush
Moriya, "A Planar Metallization Process-Its Application to Trilevel Aluminum Interconnection," IEDM, pp. 550-553, 1983.
Broadbent, "Selective Low Pressure CuD of Tungsten", J. of Electrochem. Society, vol. 131, No. 6, Jun. 84, pp. 1427-1433.
Ghondi, VLSI Fabrication Principles, John Wiley and Sons, New York, 1983, pp. 437, 438 and 556-560.
Lloyd et al., "Metallurgical Scheme for an Electromigration Resistant, High Conductivity, Extrusion Resistant Conductor", IBM Tech. Discl. Bulletin, 26(1), 6/83.

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