Method of making memory devices

Details Method of making memory devices Method of making memory devices

1987-06-22

1988-11-01

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156655, G11C 1300

Patent

active

047817895

ABSTRACT:
A method for making an optical memory storage medium which has a transparent substrate with void cells of empty spaces and ablative material on the cell walls is disclosed. In one example, a base plate is coated with a masking layer. Pits are formed on the plate by mechanically stamping the masking layer and the base plate with a punch. A layer of ablative material is next applied on the pitted plate. The masking layer is then removed, together with any ablative material on it. The base plate is joined with a cover plate that seals the top of the pits to form void cells. In another example, a base plate is coated with a photo resist. The photo resist is exposed and developed. Pits are formed on the plate by etching the uncovered areas of the base plate. This is followed by the application of ablative material and the removal of the photo resist. The base plate is joined with a cover plate that seals the top of the pits to form void cells.

REFERENCES:
patent: Re27772 (1973-10-01), Hanfmann
patent: 3305359 (1967-02-01), Delmont
patent: 3923566 (1975-12-01), Law
patent: 3980461 (1976-09-01), Moeckel
patent: 4037075 (1977-07-01), Pugsley
patent: 4081314 (1978-03-01), Smith
patent: 4126854 (1978-11-01), Sheridon
patent: 4247361 (1981-01-01), Shaheen
patent: 4256533 (1981-03-01), Mayer
patent: 4323420 (1982-04-01), Mashari
patent: 4532608 (1985-07-01), Wu
Nickols et al.; IBM Technical Disclosure Bull., vol. 20, No. 8, 1-1978, pp. 3307-3308.
Marks et al.; IBM Technical Disclosure Bull., vol. 25, No. 11A, 4-1983, pp. 5523-5524.
Patents Abstracts of Japan, vol. 5, No. 165 (P-85) [837], Oct. 22, 1981; & JP-A-59 94 529 (Fujitsu K.K.) 07-31-1981.
Patents Abstracts of Japan, vol. 7, No. 287 (M-264) [1432], Dec. 21, 1983; & JP-A-58 162 387 (Canon K.K.) 09-27-1983.
Proceedings of the IEEE, vol. 61, No. 2, Feb. 1973, pp. 148-153, IEEE, New York, U.S.; G. W. Taylor: "A Liquid-Vapor Display".
Transistor Technology, vol. III; Edited by F. J. Biondi; D. Van Nostrand Company, Inc., Princeton, N.J.; 1958; pp. 160-161.
Handbook of Thin Film Technology; Edited by L. I. Maissel et al.; McGraw Hill Book Company, N.Y.; 1970; pp. 7-48 and 7-49.

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