Method of making mask ROM with two layer gate electrode

Details Method of making mask ROM with two layer gate electrode Method of making mask ROM with two layer gate electrode

1995-06-23

1996-12-31

Niebling, John

Fishing, trapping, and vermin destroying

437 45, 437 48, 437 46, 437931, 437191, H01L 218246

Patent

active

055894143

ABSTRACT:
A substrate is covered with a gate oxide layer between FOX regions with a blanket lower lamina for a gate on the surface. A Mask code mask has a window overlying the desired gate location. A doped code implant region is formed in the substrate by ion implanting code implant dopant through the mask. Following mask removal a blanket upper lamina of the gate covers the lower lamina. A gate mask covers the upper and lower laminae. The gate mask is patterned to protect the gate region over the device, leaving the remainder of the upper and lower lamina exposed. Exposed surfaces of the laminae are etched away leaving a laminated gate. Lightly doped regions are formed in the substrate between the FOX regions and the gate by ion implanting dopant through portions of the gate oxide layer unprotected by the gate; forming spacers next to the gate; and forming source and drain regions in the substrate between the FOX regions and the spacers adjacent to the gate.

REFERENCES:
patent: 5002896 (1991-03-01), Naruke
patent: 5200355 (1993-04-01), Choi et al.
patent: 5384478 (1995-01-01), Hong
patent: 5429967 (1995-07-01), Hong
patent: 5488009 (1996-01-01), Hsue et al.
patent: 5514610 (1996-05-01), Wann et al.
patent: 5514611 (1996-05-01), Kim et al.
patent: 5538914 (1996-07-01), Chiu et al.

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