Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1989-05-25
1992-03-24
Nguyen, Nam X.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419216, 20419222, C23C 1438
Patent
active
050985418
ABSTRACT:
A magneto optic recording medium comprising a substrate, an amorphous magnetizable rare earth-transition metal alloy layer, a transparent dielectric layer on at least one side of the magnetizable layer, and a reflective surface located to reflect light through the magnetizable alloy layer. The dielectric layer is comprised of silicon carbide of the formula SiC.sub.x, wherein x, the molar ratio of carbon to silicon, is greater than 1. The dielectric layer is preferably deposited by direct current magnetron sputtering at low argon partial pressure from an electrically conductive mixture of silicon carbide and carbon. The medium exhibits similar or improved characteristics over media constructed with present dielectrics, for example, silicon suboxide (SiO.sub.y, y<2).
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Forrest Peter
Kirn Walter N.
Minnesota Mining and Manufacturing Company
Nguyen Nam X.
Sell Donald M.
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