Method of making magnetic bubble memory device by implanting hyd

Details Method of making magnetic bubble memory device by implanting hyd Method of making magnetic bubble memory device by implanting hyd

1982-04-12

1984-07-17

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 91, 365 33, 365 36, H01L 21265, G11C 1908, C04B 3500

Patent

active

044604122

ABSTRACT:
A method of implanting a magnetic garnet film with ions is disclosed in which a covering film is provided on a monocrystalline magnetic garnet film for magnetic bubbles, and hydrogen ions are implanted in a desired portion of a surface region in the magnetic garnet film through the covering film. According to this method, it is possible to form an ion-implanted layer in which the ion concentration distribution in the direction of depth is uniform, and moreover the inplane anisotropy field in the ion-implanted layer decreases only a little with time in an annealing process.

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patent: 4308592 (1981-12-01), McGouey
patent: 4346456 (1982-08-01), Kinoshita et al.
Brodsky et al., IBM-TDB, 22 (1980) 3404.
Tanoue et al. in Ion Implantation in Semi-Conductors, Ed. Namba, Plenum, N.Y. 1974, P. 285.
Gill, J. App. Phys. 52 (1981) 369.
MacNeal et al. Jour. Appl. Phys. 52 (1980) 2380.
Ahn et al. IBM-TDB, 21 (1978) 1706.

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