Method of making low work function component

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S563000, C257SE21482, C257SE21470, C257SE21140

Reexamination Certificate

active

08058159

ABSTRACT:
A method for fabricating a component is disclosed. The method includes: providing a member having an effective work function of an initial value, disposing a sacrificial layer on a surface of the member, disposing a first agent within the member to obtain a predetermined concentration of the agent at said surface of the member, annealing the member, and removing the sacrificial layer to expose said surface of the member, wherein said surface has a post-process effective work function that is different from the initial value.

REFERENCES:
patent: 5354694 (1994-10-01), Field et al.
patent: 5675972 (1997-10-01), Edelson
patent: 5722242 (1998-03-01), Edelson
patent: 5810980 (1998-09-01), Edelson
patent: 5973259 (1999-10-01), Edelson
patent: 6089311 (2000-07-01), Edelson
patent: 6103298 (2000-08-01), Edelson et al.
patent: 6110766 (2000-08-01), Hong
patent: 6117344 (2000-09-01), Cox et al.
patent: 6281514 (2001-08-01), Tavkhelidze
patent: 6417060 (2002-07-01), Tavkhelidze et al.
patent: 6495843 (2002-12-01), Tavkelidze
patent: 6531703 (2003-03-01), Tavkhelidze
patent: 6563256 (2003-05-01), Zavadil et al.
patent: 6806173 (2004-10-01), Spitz et al.
patent: 6869855 (2005-03-01), Tavkhelidze et al.
patent: 7074498 (2006-07-01), Tavkhelidze et al.
patent: 7220984 (2007-05-01), Tavkhelidze et al.
patent: 7282428 (2007-10-01), Inada
patent: 7456543 (2008-11-01), Makansi
patent: 7507649 (2009-03-01), Werner et al.
patent: 7768072 (2010-08-01), Tsai et al.
patent: 2001/0046749 (2001-11-01), Tavkhelidze et al.
patent: 2002/0033188 (2002-03-01), Shakouri et al.
patent: 2002/0153819 (2002-10-01), Seo et al.
patent: 2004/0265592 (2004-12-01), Nakamoto
patent: 2005/0018467 (2005-01-01), Naaman et al.
patent: 2005/0059198 (2005-03-01), Visokay et al.
patent: 2005/0098833 (2005-05-01), Visokay
patent: 2005/0104185 (2005-05-01), Shimogishi et al.
patent: 2007/0257605 (2007-11-01), Son et al.
patent: 2008/0258137 (2008-10-01), Takshi et al.
patent: 1309423 (1973-03-01), None
patent: 9736693 (1997-10-01), None
A. Villegas, et al “Work funciton change caused by alkali ion sputtering ” Applied Surface Science 203-204 (2003) pp. 94-97.
A. E. Souzis, M. Seidl, W. E. Carr, H. Huang; Electronic surface changes induced in silicon by hydrogen, oxygen, and cesium coverages; J. Vac. Sci. Technol. A ; May 1989; pp. 720-723; vol. 7, Issue 3.
A. E. Souzis, H. Huang, W. E. Carr, M. Seidl; Catalytic oxidation of silicon by cesium ion bombardment; J. Appl. Phys. 69, 452 (1991); DOI:10.1063/1.347684; Issue Date: Jan. 1, 1991.
J. P. Girardeau-Montaut, C. Girardeau-Montaut, M. Afif; Enhancement of photoelectric emission sensitivity of tungsten by potassium ion implantation; Appl. Phys. Lett. / vol. 66 / Issue 15; Apr. 10, 1995.
Hubert Gnaser; Exponential scaling of sputtered negative-ion yields with transient work-function changes on Cs+-bombarded surfaces; Physical Review B; Dec. 15, 1996; vol. 54, No. 23.
Y. W. Ko; S. I. Kim; Electron emission and structure properties of cesiated carbon films prepared by negative carbon ion beam; Journal of Applied Physics; Sep. 1, 1997; vol. 82, Issue 5; 2631 (1997); DOI:10.1063/1.366077.
Hideyuki Yamazaki, Shin-Ichi Nakamura; Work-function changes in high-dose B-implanted Si with keV Cs+ bombardment; Physical Review Online Archive; Nov. 20, 1998; vol. 59, Issue 19; pp. 12298-12300.
D. Vouagner, CS. Beleznai, J. P. Girardeau-Montaut; Characterization of the photoelectric effect on K+-implanted W samples ; Applied Surface Science; vols. 138-139, Jan. 1999, pp. 517-521.
Florian Banhart; Irradiation effects in carbon nanostructures; Mar. 15, 1999; Rep. Prog. Phys. 62 (1999) 1181-1221. Printed in the UK.
C.B. Yarling; History of industrial and commercial on implantation 1906-1978; Journal of Vacuum Science and Technology A; J. Vac. Sci. Technol. A vol. 18, Issue 4, pp. 1746-1750 (Jul. 2000).
Yuriy Kudriavtsev, Rene Asomoza; Work function change caused by alkali ion sputtering of a sample surface ; Applied Surface Science; vol. 167, Issues 1-2, Oct. 16, 2000, pp. 12-17.
Pushkar Ranade, Hideki Takeuchi, Tsu-Jae King, Chenming Hu; Work Function Engineering of Molybdenum Gate Electrodes by Nitrogen Implantation; Electrochem. Solid-State Lett., vol. 4, Issue 11, pp. G85-G87 (Nov. 2001).
R. G. Musket, M. Balooch; Creation of stable, low work function surfaces on Si by implantation of 3 keV Cs+; Journal of Vacuum Science and Technology A; vol. 20, Issue 6, pp. 2049-2051 (Nov. 2002).
Zhanping Li, Takahiro Hoshi, Retsu Oiwa; Characteristics of ultra-low-energy Cs+ ion beam bombardments; Applied Surface Science; vols. 203-204, Jan. 15, 2003, pp. 323-328.
S. Ferrari, M. Perego, M. Fanciulli; Quantitative depth profiling at silicon/silicon oxide interfaces by means of Cs+ sputtering in negative mode by ToF-SIMS: a full spectrum approach; Applied Surface Science; vols. 203-204, Jan. 15, 2003, pp. 52-55.
Villegas A, Yuriy Kudriavtsev, Godines A, Asomoza R, Work function change caused by alkali ion sputtering, Applied Surface Science; vols. 203-204, Jan. 15, 2003, pp. 94-97.
Van Der Heide P. A. W., Lim M. S., Perry S. S. , Bennett J; Transient effects induced through ripple topography growth during Cs+ depth profile analysis of Si at high incidence angles; Applied surface science ISSN 0169-4332, Jan. 15, 2003, vol. 203-04 (935 p.) [Document : 4 p.] (5 ref.), pp. 156-159 [4 page(s) (article)].
Do-Hyung Kim, Hoon-Sik Jang, Chang-Duk Kim, Dong-Soo Cho, Hee-Dong Kang, Hyeong-Rag Lee; Enhancement of the field emission of carbon nanotubes straightened by application of argon ion irradiation; Chemical Physics Letters; vol. 378, Issues 3-4, Sep. 5, 2003, pp. 232-237.
W. M. Tsang, S. P. Wong; Effect of tungsten implantation on electron field emission properties of ion-beam-synthesized SiC layers; Applied Physics Letters; Apr. 19, 2004; vol. 84, 3193 (2004); DOI:10.1063/1.1705730.
P. A. W. Van Der Heide, C. Lupu, A. Kutana and J. W. Rabalais; Factors affecting the retention of Cs+ primary ions in Si ; Applied Surface Science; vol. 231-232, Jun. 15, 2004, pp. 90-93.
T. Wirtz, H. -N. Migeon; Work function shifts and variations of ionization probabilities occurring during SIMS analyses using an in situ deposition of Cs0 ;Surface Science; vol. 561, Issues 2-3, Jul. 20, 2004, pp. 200-207.
Jun Yuan, Jason C.S. Woo; Tunable Work Function in Fully Nickel-Silicided Polysilicon Gates for Metal Gate MOSFET Applications; Feb. 2, 2005; IEEE Electron Device Letters, vol. 26, issue 2, pp. 87-89.
W.D. Yu, J.H. Zhang, X. Wang, X.M. Li, X.D. Gao; Characterization and field-emission property of aligned porous carbon nanotube film by hydrogen-ion implantation; Applied Physics A: Materials Science & Processing; Jun. 2005; vol. 81, No. 1; pp. 169-172.
I.R. Jankov, R.N. Szente, I.D. Goldman, M.N.P. Carreno, M.A. Valle, M. Behar, C.A.R. Costa, F. Galembeck, R. Landers; Modification of electrode materials for plasma torches; Surface and Coatings Technology; vol. 200, Issues 1-4, Oct. 1, 2005, pp. 254-257.
Jung-Ah Lee, Jin-Woo Lee, Dae-Sung Yoon, Kyeong-Kap Paek, Yun-Hi Lee, Beong-Kwon Ju; Improvement of Field-Emission Properties of Screen Printed Carbon Nanotube Films via Argon Plasma Treatment; Journal of the Electrochemical Society; Apr. 10, 2006; vol. 153, Issue 6, pp. H111-H114 (2006).
P. Chen, T. Janssens, W. Vandervorst; Steady-state Cs surface concentration on Si and Ge after low energy Cs+ bombardment by SIMS; Applied Surface Science; vol. 252, Issue 19, Jul. 30, 2006, pp. 7239-7242.
J. Brison, N. Mine, S. Poisseroux, B. Douhard, R.G. Vitchev, L. Houssiau; Measurement and modeling of work function changes during low energy cesium sputtering; Surface Science; vol. 601, Issue 6, Mar. 15, 2007, pp. 1467-1472.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of making low work function component does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making low work function component, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making low work function component will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4263330

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.