Method of making low resistance substrate or buried layer contac

Fishing – trapping – and vermin destroying

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437 25, 437 26, 437174, 437247, 437248, 148DIG90, H01L 2126

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052293220

ABSTRACT:
An inexpensive and reliable technique for forming connections to a substrate or buried layer of a semiconductor structure employs a laser to melt a small, selected region of a lightly doped layer and a highly doped underlying layer. Extremely rapid diffusion of impurities and mixing of materials within the liquid phase of the melt quickly creates a uniformly doped conductive region when the melt is allowed to recrystallize.

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R. T. Young, "Substrate Heating and Emitter Dopant Effects in Laser Annealed Cells" App. Phys. Lett. 39(4), Aug. 15 1981.
Anantha et al. "Laser Annealing Method For Making Heavily Doped Emitter Transistor" IBM TDB vol. 22, No. 2 Jul. 1979 pp. 575-576.
IBM Technical Disclosure Bulletin, Chu et al.; vol. 25, No. 1; Jun. 1982.

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