Method of making light emitting diodes (LEDs) with improved...

Details Method of making light emitting diodes (LEDs) with improved... Method of making light emitting diodes (LEDs) with improved...

2008-01-23

2009-12-08

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S022000, C438S029000, C438S508000

Reexamination Certificate

active

07629195

ABSTRACT:
Methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to increase light extraction from an interior of the LED device.

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