Method of making layered superlattice material with...

Details Method of making layered superlattice material with... Method of making layered superlattice material with...

2005-05-10

2005-05-10

Flynn, Nathan J. (Department: 2826)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S239000, C438S240000, C438S396000

Reexamination Certificate

active

06890768

ABSTRACT:
In the manufacture of an integrated circuit memory cell, a strontium bismuth tantalate or strontium bismuth tantalum niobate thin film layer (50) is deposited on a substrate (28, 49) and a carefully controlled UV baking process is performed on the strontium bismuth tantalate layer (50) prior to the deposition of an ultra-thin bismuth tantalate layer (51). A second electrode (52) is formed on top of the ultra-thin bismuth tantalate layer (51).

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