Method of making integrated circuits using ruthenium and its...

Details Method of making integrated circuits using ruthenium and its... Method of making integrated circuits using ruthenium and its...

2007-07-24

2007-07-24

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S637000, C438S673000, C438S700000

Reexamination Certificate

active

10600039

ABSTRACT:
The present invention generally relates to methods used for fabricating integrated circuits (“ICs”), using Ruthenium (“Ru”) and its oxides and/or Iridium (“Ir”) and its oxides as the diffusion barrier to contain and control copper (“Cu”) interconnects. The invention also covers ICs incorporating such materials in the diffusion barrier to contain and control the Cu interconnects. The present invention advantageously provides better integration and fabrication of advanced IC chips with sub-micron features.

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