Method of making insulator structure for polysilicon resistors

Details Method of making insulator structure for polysilicon resistors Method of making insulator structure for polysilicon resistors

1995-07-05

1997-02-25

Niebling, John

Fishing, trapping, and vermin destroying

437231, 437918, H01L 218244

Patent

active

056058594

ABSTRACT:
A polysilicon resistor structure for use within integrated circuits and a method by which the polysilicon resistor structure may be formed. A first insulating layer which is formed from a glasseous material is formed directly upon the surface of a semiconductor substrate. A polysilicon resistor is formed in contact with the first insulating layer. A second insulating layer is formed directly upon the first insulating layer and over the polysilicon resistor. The second insulating layer is formed from a silicon oxide material deposited through a Plasma Enhanced Chemical Vapor Deposition process employing silane as the silicon source material.

REFERENCES:
patent: 4413271 (1983-11-01), Gontowski et al.
patent: 4951118 (1990-08-01), Nakamura
patent: 5525831 (1996-06-01), Ohkawa et al.

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