Method of making in-containing III/V semiconductor devices

Details Method of making in-containing III/V semiconductor devices Method of making in-containing III/V semiconductor devices

1995-07-21

1996-06-18

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437129, H01L 2120

Patent

active

055274250

ABSTRACT:
In-containing III/V semiconductor materials (e.g., InGaP) can be dry etched in BCl.sub.3 in ECR apparatus. We have discovered that addition of N.sub.2 to the BCl.sub.3 can result in substantially higher etch rate (e.g., more than 50% higher). Etching is substantially without incubation period, and the resulting surface can be very smooth (e.g., RMS roughness less than 5 nm, even less than 2.5 nm). Exemplarily, the novel etching step is used in the manufacture of a InGaP/GaAs transistor.

REFERENCES:
patent: 4547261 (1985-10-01), Maa et al.
patent: 5350488 (1994-09-01), Webb
W. F. Marx et al., "Electron cyclotron resonance etching of aluminum alloys with BCl.sub.3-- Cl.sub.2 --N.sub.2," Journal of Vacuum Science and Technology A, vol. 10, No. 4, pt. 1, pp. 1232-1237, Jul.-Aug. 1992.
"Reactive Ion Etching of Copper with BCl.sub.3 and SiCl.sub.4 : Plasma Diagnostics and Patterning", by B. J. Howard et al., J. Vac. Sci. Technol. A, vol. 12(4), Jul./Aug. 1994, pp. 1259-1264.
"Electron Cycloton Resonance Etching of Aluminum Alloys with BCl.sub.3 --Cl.sub.2 --N.sub.2 ", by W. F. Marx et al., J. Vac. Sci. Technol. A, vol. 10(4), Jul./Aug. 1992, pp. 1232-1237.
"Fabrication of Self-aligned GaAs/AlGaAs and GaAs/InGaP Microwave Power Heterojunction Bipolar Transistors", by F. Ren et al., J. Vac. Sci. Technol. B, vol. 12(5), Sep./Oct. 1994, pp. 2916-2928.

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