Method of making improved electrical contact to porous silicon

Details Method of making improved electrical contact to porous silicon Method of making improved electrical contact to porous silicon

1997-10-06

2000-01-25

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438694, 438 22, 438 23, 438960, 438 34, 438409, H01L 2100, H01L 21465

Patent

active

060178116

ABSTRACT:
A method for manufacturing a semiconductor structure having improved light mitting characteristics includes the step of exposing a semiconductor substrate, such as a silicon wafer, to an unbiased etching solution comprised of an acid, water, and an oxidizing agent to form a porous region having interstitial spaces in the semiconductor structure. Next, an electrically conductive contact structure is formed in the interstitial spaces and on the semiconductor structure. The large surface area at the interface junction between the electrical contact layer and the porous region is believed to enhance the intensity of light emitted by the porous region by allowing increased electrical current flow across the interface junction.

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