Method of making high-speed double-heterostructure bipolar trans

Details Method of making high-speed double-heterostructure bipolar trans Method of making high-speed double-heterostructure bipolar trans

1996-07-18

1997-08-12

Niebling, John

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

257200, 257197, 438320, 438970, H01L 21265

Patent

active

056565151

ABSTRACT:
The lateral base resistance of a DHBT device is reduced and its high-speed operating characteristics thereby improved by forming a structure that initially includes a relatively thick extrinsic base layer overlying a relatively thin intrinsic base layer. The extrinsic base layer is then etched to form a window in which an emitter layer is deposited. In that way, the growth time for formation of the base-emitter junction is minimized. High-performance devices are thereby realized in a relatively simple process that has advantageous self-alignment features.

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"MOCVD-Grown AlGaAs/GaAs HBTs with Epitaxially Embedded p.sup.+ Layers in Extrinsic Base" by K.Taira et al, Electronics Letters, vol. 23, No. 19, pp. 989-990, Sep. 10, 1987.
"High-f.sub.max AlGaAs/InGaAs and AlGaAs/GaAs HBTs Fabricated with MomBE Selective Growth . . . " by H.Shimawaki,IEEE Trans. ED, vol. 40, No. 11, p. 2124, Nov. 1993.

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