Method of making high density semiconductor device such as float

Details Method of making high density semiconductor device such as float Method of making high density semiconductor device such as float

1982-09-27

1985-01-08

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365 51, 365185, G11C 1140

Patent

active

044930577

ABSTRACT:
An improved method of making a semiconductor device such as an N-channel, double level poly, MOS read only memory or ROM array is provided; the array is of very dense structure and may be electrically programmable by floating gates which are interposed between the gate oxide and control gates formed by polycrystalline silicon or metal row address lines. The electrical programming of the cells is accomplished by applying selected voltages to the source, drain, control gate and substrate. The very dense array results from a simplified manufacturing process generally compatible with standard N-channel silicon gate technology. Parallel strips of gate oxide, polycrystalline silicon, and nitride (functioning as an oxidation mask) are created in one mask step before field oxide is grown, then a perpendicular pattern of conductive strips is etched using a second mask step.

REFERENCES:
patent: 4317273 (1982-03-01), Guterman et al.
patent: 4363109 (1982-12-01), Gardner
patent: 4432075 (1984-02-01), Eitan

Affiliated with

Also associated with

Rating

Method of making high density semiconductor device such as float does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making high density semiconductor device such as float, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making high density semiconductor device such as float will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-116707