Method of making heterojunction bipolar structure having air and

Details Method of making heterojunction bipolar structure having air and Method of making heterojunction bipolar structure having air and

1997-12-01

1999-08-24

Brown, Peter Toby

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

438315, 438411, 438412, 438421, 438423, 148DIG72, 257200, H01L 21331

Patent

active

059435771

ABSTRACT:
In a method manufacturing a semiconductor device, a semiconductor layer having a device forming region is formed on substrate. Next, a region except for the device forming region is changed into an insulator. In this case, a conducting path is left across the semiconductor device to electrically connect the semiconductor device with an adjacent semiconductor device. Subsequently, the device forming region is etched on the condition that the conducting path is left. Finally, the conducting path is disrupted after the etching process. Thus, the semiconductor device and the adjacent semiconductor device are left in an electrical contact via the conducting path during the etching process. Consequently, the uniformity of the etching between the semiconductor devices is largely improved.

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Mau-Chung F. Chang et al., IEEE Electron Device Letters, vol. EDL.8, AlGaAs/GaAs Heterojunction Bipolar Transistors Fabricated Using a Self-Aligned Dual-Lift-Off Process, Jul. 7, 1987, pp. 303-305.

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