Method of making flexible interconnections with dual-metal-dual-

Details Method of making flexible interconnections with dual-metal-dual- Method of making flexible interconnections with dual-metal-dual-

1996-05-22

1999-10-26

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438638, 438669, 438670, 438671, 438720, 438737, 438738, 438740, H01L 214763

Patent

active

059727888

ABSTRACT:
A metal interconnect having a high conductivity and high resistance to metal migration failure is formed of two layers of metal or alloy (such as TI/CuAlSi) with a dielectric interposed therebetween and a connection made between the layers by a conductive material, preferably in the form of a plug or stud formed in an aperture of an inter-level dielectric, at ends of the interconnect. A high precision metal-to-metal capacitor can be formed from the same layers by forming separate connections to each of the layers. The topography of the interconnect (and capacitor) is of reduced severity and facilitates planarization of an overlying inter-level dielectric.

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