Method of making field effect transistor

Details Method of making field effect transistor Method of making field effect transistor

1996-05-17

1999-03-30

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438172, 438184, 438579, 438606, H01L 21338, H01L 2128

Patent

active

058888608

ABSTRACT:
A method of fabricating an FET includes forming an active layer including a low dopant concentration layer, forming a recess in the active layer so that the bottom of the recess is present within the low dopant concentration semiconductor layer, forming side walls in the recess, and forming a gate electrode in the-recess using the side walls as masks. The gate length can be precisely reduced by the side walls. Further, even when the active layer is anisotropically etched to form the side walls, the low dopant concentration semiconductor layer is subjected to the etching. Therefore, a part of the active layer where a greater part of channel current flows is not adversely affected by the etching. Therefore, any variation in the thickness of the active layer does not vary the channel current of the transistor.

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