Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-13
1995-10-17
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257411, H01L 2978, H01L 3300
Patent
active
054593476
ABSTRACT:
A field-effect semiconductor device of this invention includes a first insulating film formed on a semiconductor substrate, a source region of a second conductivity type and a drain region of the second conductivity type, which are arranged on the insulating film and are formed on both the sides of a semiconductor active layer of a first conductivity type, a second insulating film for covering the top and side surfaces of the semiconductor active layer, the source region, and the drain region, a gate electrode arranged on the second insulating film corresponding to the semiconductor active layer, a non-oxidizable third insulating film arranged on the second insulating film for covering the side surfaces of the semiconductor active layer and the source and drain regions, and the other regions, a fourth insulating film arranged on the non-oxidizable third insulating film, a fifth insulating film for covering a portion of the third insulating film located on the side surfaces of the source and drain regions, the fourth insulating film, the semiconductor active layer, the second insulating film arranged on the top surfaces of the source and drain regions, and a gate electrode arranged on the second insulating film, and a source electrode and a drain electrode arranged on the fifth insulating film and connected to the source region and the drain region, respectively, through contact holes formed in the fifth insulating film and the second insulating film.
REFERENCES:
patent: 5124768 (1992-06-01), Mano et al.
patent: 5125007 (1992-06-01), Yamaguchi et al.
patent: 5144390 (1992-09-01), Matloubian
patent: 5187113 (1993-02-01), Tyson et al.
patent: 5188973 (1993-02-01), Omura et al.
patent: 5233218 (1993-08-01), Miura
Izumi Katsutoshi
Omura Yasuhisa
Crane Sara W.
Meier Stephen D.
Nippon Telegraph and Telephone Corporation
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