Method of making electroded wafer for electro-optic devices

Details Method of making electroded wafer for electro-optic devices Method of making electroded wafer for electro-optic devices

1979-04-30

1981-02-17

Hall, Carl E.

Metal working

Piezoelectric device making

427100, 427125, 427305, H01L 4122

Patent

active

042506034

ABSTRACT:
An electroded wafer for use in electro-optic devices comprising a ceramic wafer having piezoelectric properties and having faces substantially larger than the thickness of the wafer. On the wafer are a plurality of parallel slots cut in at least one face of said wafer to form an interdigital matrix wherein adjacent slots are cut through the periphery of the wafer at opposite ends. Further included is a metallic electrode plated on the interior of the slots and the periphery of the wafer by electroless plating of at least one metal in contact with a palladium catalyzing compound such that the catalyzing compound is present only on the portions of the wafer to be plated.

REFERENCES:
patent: 3011920 (1961-12-01), Shipley, Jr.
patent: 3059130 (1962-10-01), Robins
patent: 3798050 (1974-03-01), Franz et al.
patent: 3873187 (1975-03-01), Brooks
patent: 4066809 (1978-01-01), Alpaugh et al.
patent: 4123567 (1978-10-01), Massa

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