Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-06-26
1997-08-12
Wilczewski, Mary
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
257530, 438 20, 438666, 438601, H01L 2170, H01L 2700
Patent
active
056565305
ABSTRACT:
An electrostatic discharge device having a small separation between two traces wherein a voltage above a desired threshold will discharge across the separation through the mechanism of cold cathode electric field emission. Conditions which permit quantum mechanical tunneling of electrons across the emitting cathode/vacuum potential barrier, such as low emitter work function, electric field enhancing geometry, and cathode/anode separation size, determine the voltage necessary for discharge by this mechanism. One device has a first conductive trace formed on an insulating layer and then masked and etched to leave an undercut with a sharp point. A second conductive trace is formed in the undercut opposite the point, resulting in a three-dimensional cross section having a very small separation. A second device has the point formed by depositing a metal layer over a spacing in a dielectric layer, and then etching out the dielectric layer.
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Dutton Brian L.
Hewlett-Packard Co.
Wilczewski Mary
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