Method of making disposable channel masking for both source/drai

Details Method of making disposable channel masking for both source/drai Method of making disposable channel masking for both source/drai

1999-03-30

2000-08-15

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438197, 438231, 438301, 438303, 438305, 438585, H01L 21338, H01L 21336, H01L 213205

Patent

active

061035599

ABSTRACT:
A method is provided for fabricating a semiconductor device, the method including forming a first dielectric layer above a structure and forming an island of a sacrificial layer above the first dielectric layer. The method also includes introducing a first dopant into first portions of the structure, leaving a second portion of the structure protected by the island, and removing first portions of the island leaving a second portion of the island. The method further includes introducing a second dopant into the first portions and third portions of the structure, leaving a fourth portion of the structure protected by the second portion of the island. The method additionally includes forming a second dielectric layer adjacent the second portion of the island, removing the second portion of the island, forming a gate dielectric above the fourth portion of the structure and forming a gate conductor above the gate dielectric.

REFERENCES:
patent: 4732871 (1988-03-01), Buchmann et al.
patent: 4956314 (1990-09-01), Tam et al.
patent: 4975382 (1990-12-01), Takasugi

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