Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2011-04-19
2011-04-19
Nguyen, Thinh T (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S197000, C438S198000, C257S009000, C257S029000, C257SE21040
Reexamination Certificate
active
07927978
ABSTRACT:
An electronic device comprises a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and a at least one epitaxial layer of graphene is disposed on the single crystal region. In a currently preferred embodiment, the single crystal region comprises multilayered hexagonal BN. A method of making such an electronic device comprises the steps of: (a) providing a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and (b) epitaxially forming a at least one graphene layer on that region. In a currently preferred embodiment, step (a) further includes the steps of (a1) providing a single crystal substrate of graphite and (a2) epitaxially forming multilayered single crystal hexagonal BN on the substrate. The hexagonal BN layer has a surface region substantially lattice-matched to graphene, and step (b) includes epitaxially forming at least one graphene layer on the surface region of the hexagonal BN layer. Applications to FETs are described.
REFERENCES:
patent: 5739563 (1998-04-01), Kawakubo et al.
patent: 7015142 (2006-03-01), DeHeer et al.
patent: 7091096 (2006-08-01), Balasubramanian et al.
patent: 7170120 (2007-01-01), Datta et al.
patent: 2003/0186059 (2003-10-01), Hirata et al.
patent: 2004/0253820 (2004-12-01), DeHeer et al.
patent: 2005/0212014 (2005-09-01), Horibe et al.
patent: 0281187 (2002-10-01), None
PCT International Search Report, including transmittal letter, search report and examiner's opinion totaling 12 pages (Jul. 17, 2007).
C. Oshima, et al, “A hetero-epitaxial-double-atomic-layer system of monolayer graphene/monolayer h-BN on Ni(III),”Solid State Communications, vol. 116, No. 1, pp. 37-40 (2000).
C. Oshima, et al., “A hetero-epitaxial-multi-atomic-layer system of graphene and h-BN,”Surface Review and Letters, vol. 7, No. 5 & 6, pp. 521-525 (2000).
M Wilson, “Electrons in Atomically . . . ,”Phys. Today, pp. 21-23 (Jan. 2006).
C. Berger et al., “Ultrathin Epitaxial Graphite . . . ,”J. Phys. Chem B, vol. 108, pp. 19912-19916 (Dec. 2004).
M. Hubacek, “Synthesis of Boron Nitride . . . ,” available on Internet website URL http://hubacek.jp/bn/bn.htm on or before Feb. 9, 2006.
J. W. Matthews et al., “Almost perfect epitaxial multilayers,”J. Vac. Sci. Technol., vol. 14, No. 4, pp. 989-991 (Jul./Aug. 1977).
K. S. Novoselov et al., “Two-dimensional gas . . . ,”Nature, vol. 438, pp. 197-200 (Nov. 2005).
Y. Zhang et al., “Experimental observation . . . ,”Nature, vol. 438, pp. 201-204 (Nov. 2005).
J. D. H. Donnay et al., “Crystal Data, Determinative Tables,” 3rdEd.,US Dept. Comm., NBS, pp. H256, H259 (1973).
J. Y. Tsao, “Materials Fundamentals of Molecular Beam Epitaxy,”Academic Press, Inc., p. 167 (1993).
K. S. Novoselov et al., “Electric Field Effect . . . ,”Science, vol. 306, pp. 666-669 (Oct. 2004).
L. N. Pfeiffer et al., “Ballistic hole transport . . . ,”Appl. Phys. Lett., vol. 87, pp. 073111-(1-3) (Sep. 2005).
Alcatel-Lucent USA Inc.
Nguyen Thinh T
Urband M. J.
LandOfFree
Method of making devices including graphene layers... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making devices including graphene layers..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making devices including graphene layers... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2709062