Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-09-09
2011-11-08
Roman, Angel (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S034000, C438S151000, C438S164000, C438S704000, C438S942000
Reexamination Certificate
active
08053288
ABSTRACT:
In a method of making device of a display, an insulating layer, a semiconductor layer, an ohmic contact layer, a second conductive layer, and a photoresist pattern are consecutively formed on a first conductive structure. The photoresist pattern includes a first thickness region, and a second thickness region outside the first thickness region. The thickness of the second thickness region is smaller than that of the first thickness region. In addition, in a gate driver on array (GOA) of a display, it includes a gate driver on array structure with a pull-down transistor. The pull-down transistor has a gate electrode, a semiconductor island, a source electrode and a drain electrode. The semiconductor island extends out of the edges of the gate electrode, the source electrode, and the drain electrode.
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Chang Lee-Hsun
Chen Jing-Ru
Shih Ming-Chang
Tsai Tung-Chang
Tseng Kuei-Sheng
AU Optronics Corp.
Hsu Winston
Margo Scott
Roman Angel
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