Method of making device of a display

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S034000, C438S151000, C438S164000, C438S704000, C438S942000

Reexamination Certificate

active

08053288

ABSTRACT:
In a method of making device of a display, an insulating layer, a semiconductor layer, an ohmic contact layer, a second conductive layer, and a photoresist pattern are consecutively formed on a first conductive structure. The photoresist pattern includes a first thickness region, and a second thickness region outside the first thickness region. The thickness of the second thickness region is smaller than that of the first thickness region. In addition, in a gate driver on array (GOA) of a display, it includes a gate driver on array structure with a pull-down transistor. The pull-down transistor has a gate electrode, a semiconductor island, a source electrode and a drain electrode. The semiconductor island extends out of the edges of the gate electrode, the source electrode, and the drain electrode.

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