Method of making damascene diodes using sacrificial material

Details Method of making damascene diodes using sacrificial material Method of making damascene diodes using sacrificial material

2011-04-19

2011-04-19

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C257SE21017, C257SE21090, C257SE21102, C438S044000, C438S360000, C438S488000, C438S496000, C438S700000

Reexamination Certificate

active

07927977

ABSTRACT:
A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first layer, the sacrificial material being different from the seed material, patterning the first layer and the second layer into a plurality of separate features, forming an insulating filling material between the plurality of the separate features, removing the sacrificial material from the separate features to form a plurality of openings in the insulating filling material such that the seed material is exposed in the plurality of openings, and growing a semiconductor material on the exposed seed material in the plurality of openings.

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