Method of making contacts on an integrated circuit

Details Method of making contacts on an integrated circuit Method of making contacts on an integrated circuit

1997-02-24

1999-08-24

Niebling, John F.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438754, H01L 21302, H01L 21461

Patent

active

059424486

ABSTRACT:
A method of forming a contact on a body of semiconductor material within an opening in a passivation layer of silicon carbide in which the contact is a bond pad of aluminum on the semiconductor body, a barrier layer of TiW on the bond pad and over a portion of the passivation layer around the bond pad, and a gold layer on the barrier layer. In forming the contact, the TiW barrier layer is etched with an aqueous solution of hydrogen peroxide and ethylene diamine tetraacetic acid.

REFERENCES:
patent: 4554050 (1985-11-01), Minford et al.
patent: 4782380 (1988-11-01), Shankar et al.
patent: 5244836 (1993-09-01), Lim
patent: 5726501 (1998-03-01), Matsubara

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