Method of selectively etching compound semiconductor and method

Details Method of selectively etching compound semiconductor and method Method of selectively etching compound semiconductor and method

1997-04-10

1999-08-24

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438738, 438718, H01L 21302

Patent

active

059424478

ABSTRACT:
A wafer on which a GaAs layer is disposed on an Al.sub.x Ga.sub.1-x As (0<x.ltoreq.1) layer. An etching mask is formed on the GaAs layer. An etching gas containing chlorine, oxygen, and nitrogen is fed into a reaction chamber to generate a plasma having a plasma density of 10.sup.10 cm.sup.-3 or more, and the GaAs layer is etched using the Al.sub.x Ga.sub.1-x As layer of the wafer as an etching stop layer. This selective etching method is applied to formation of a gate recess structure in a compound semiconductor device.

REFERENCES:
patent: 5512331 (1996-04-01), Miyafuni
"Selective and Nonselective vie of GaAs and AlGaAs In SiCl4 Plasma"; Murad et, al.; Microelectron Eng. (1994'); 23(1-4); abstract.
Miyakuni et al., "Low Ion Energy Electron Cyclotron Resonance Etching Of InP Using Cl.sub.2 /N.sub.2 Mixture", Journal of Applied Physics, vol. 78, No. 9, 1995, pp. 5734-5738.
Hu et al., "Recent Developments In Reactive Plasma Etching Of III-V Compound Semiconductors", SPIE, vol. 797, 1987, pp. 98-109.
Miyakuni et al., "Low Damage Etching Of InGaAs/AlGaAs By The Electron Cyclotron Resonance Plasma With Cl.sub.2 /He Mixture For Heterojunction Bipolar Transistors", Journal of Vacuum Science Technology B, vol. 12, No. 2, 1994, pp. 530-535.

Affiliated with

Also associated with

Rating

Method of selectively etching compound semiconductor and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of selectively etching compound semiconductor and method , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of selectively etching compound semiconductor and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-466881