Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-04-28
2011-11-08
Nguyen, Ha Tran T (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S614000, C438S629000, C438S637000, C438S639000, C257S774000, C257S758000, C257S204000
Reexamination Certificate
active
08053353
ABSTRACT:
A method for forming, on a surface of a thinned-down semiconductor substrate, a contact connected to a metal track of an interconnect stack formed on the opposite surface of the thinned-down substrate, including the steps of: forming, on the side of a first surface of a substrate, an insulating region penetrating into the substrate and coated with a conductive region and with an insulating layer crossed by conductive vias, the vias connecting a metal track of the interconnect stack to the conductive region; gluing the external surface of the interconnect stack on a support and thinning down the substrate; etching the external surface of the thinned-down substrate and stopping on the insulating region; etching the insulating region and stopping on the conductive region; and filling the etched opening with a metal.
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French Search Report dated Jan. 26, 2009, from corresponding French Application No. 08/52950, filed Apr. 30, 2008.
Jorgenson Lisa K.
Morris James H.
Nguyen Ha Tran T
STMicroelectronics (Crolles 2) SAS
Tran Thanh Y
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