Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2006-03-09
2008-10-21
Everhart, Caridad M (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S737000, C438S753000, C257SE21305
Reexamination Certificate
active
07439184
ABSTRACT:
A pair of comb-teeth electrodes are made from a material substrate including a first conduction layer, a second conduction layer and an intervening insulation layer. The paired electrodes includes first and second comb-teeth electrodes. The first comb-teeth electrode is composed of a first conductor derived from the first conduction layer, a second conductor derived from the second conduction layer and an insulator derived from the insulation layer. The second comb-teeth electrode is derived from the second conduction layer.
REFERENCES:
patent: 6423563 (2002-07-01), Fukada et al.
patent: 2002/0005976 (2002-01-01), Behin et al.
patent: 10-190007 (1998-07-01), None
patent: 10-270714 (1998-10-01), None
patent: 2000-31502 (2000-01-01), None
patent: WO 01/74707 (2001-10-01), None
Kouma Norinao
Soneda Hiromitsu
Tsuboi Osamu
Ueda Satoshi
Everhart Caridad M
Fujitsu Limited
Kratz Quintos & Hanson, LLP
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