Method of making CMOS devices

Details Method of making CMOS devices Method of making CMOS devices

1980-09-24

1982-06-22

Demers, Arthur P.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148187, 357 41, 357 91, H01L 2122

Patent

active

043355048

ABSTRACT:
A method of making complementary n-channel and p-channel metal oxide semiconductor (CMOS) device pairs in a common insulatively supported semiconductor layer, including simultaneously converting by exposure to an ion beam adjacently arranged complementary regions in different members of a device pair in said layer from a first to a second conductivity type.

REFERENCES:
patent: 3875656 (1975-04-01), Handi
patent: 3928081 (1975-12-01), Marley et al.
patent: 3982967 (1976-09-01), Ku et al.
patent: 4050965 (1977-09-01), Ipri et al.
patent: 4183134 (1980-01-01), Dehler
patent: 4224088 (1980-09-01), Komatsu
patent: 4280272 (1981-07-01), Egawa et al.

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