Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1978-12-06
1981-01-27
Lazarus, Richard B.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
29 2517, H01J 902
Patent
active
042466822
ABSTRACT:
The cathode support is made from a mixture of nickel powder and nickel coated particles of an alloy containing nickel and an activator capable of reducing barium oxide to barium by compacting the mixture and sintering it at a temperature between 900.degree. to 1100.degree. C.
REFERENCES:
patent: 3425111 (1969-02-01), Denison, Jr.
patent: 3730706 (1973-05-01), Beuscher
patent: 3911309 (1975-10-01), Kummel et al.
patent: 4081713 (1978-03-01), Misumi
patent: 4114243 (1978-09-01), Soeno et al.
A. C. Aten et al., "Chemical Transport in Oxide Cathodes", vol. 26, Phillips Research Reports, 1971, pp. 519-531.
Lazarus Richard B.
U.S. Philips Corporation
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