Method of making bipolar transistor

Details Method of making bipolar transistor Method of making bipolar transistor

1997-08-26

1998-04-14

Niebling, John

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

438312, 438604, 438606, H01L 21331

Patent

active

057390622

ABSTRACT:
A method of fabricating a bipolar transistor includes successively growing a collector layer, a base layer, and a crystalline mask layer on a semiconductor substrate; forming an opening in the crystalline mask layer to expose a portion of the base layer; growing an emitter layer on the crystalline mask layer and on the base layer exposed in the opening of the mask layer; forming an emitter electrode on the emitter layer; removing part of the emitter layer using the emitter electrode as a mask; removing the crystalline mask layer; forming a first resist pattern for formation of base electrodes; forming base electrodes using the first resist pattern and the emitter electrode as masks; removing the first resist pattern; forming a second resist pattern for formation of collector electrodes covering base electrodes and the emitter electrode; using the second resist pattern as a mask, removing portions of the base layer and the collector layer; and forming collector electrodes in contact with the collector layer.

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Tanoue et al, "A Heterojunction Bipolar Transistor With An Epitaxially Regrown Emitter", IEEE, 1992 pp. 4.5.1-4.5.4.

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