Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2006-07-11
2006-07-11
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S082000, C438S758000
Reexamination Certificate
active
07074640
ABSTRACT:
The present invention involves a low-temperature, photoresist-free method of fabricating a barrier layer on a flexible substrate. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.
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International Search Report for International Application No. PCT/US2004/015861, Internationa Filing Date May 17, 2004, dated May 3, 2005.
Fury Michael A.
Lee Wai M.
Maloney David J.
Roman, Jr. Paul J.
Morgan & Lewis & Bockius, LLP
Nelms David
Nguyen Thinh T.
Simon Fraser University
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